发明名称 |
Semiconductor device with raised segment |
摘要 |
A device having a raised segment, and a manufacturing method for same. An SOI wafer is provided having a substrate, an insulating layer disposed over the substrate, and a layer of semiconductor material disposed over the insulating layer. The semiconductor material is patterned to form a mesa structure. The wafer is annealed to form a raised segment on the mesa structure.
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申请公布号 |
US2004197969(A1) |
申请公布日期 |
2004.10.07 |
申请号 |
US20030406403 |
申请日期 |
2003.04.03 |
申请人 |
CHEN HAO-YU;YEO YEE-CHIA;YANG FU-LIANG;HU CHENMING |
发明人 |
CHEN HAO-YU;YEO YEE-CHIA;YANG FU-LIANG;HU CHENMING |
分类号 |
H01L21/00;H01L21/336;H01L21/84;H01L27/01;H01L27/12;H01L29/786;H01L31/062;(IPC1-7):H01L21/84 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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