发明名称 Semiconductor device with raised segment
摘要 A device having a raised segment, and a manufacturing method for same. An SOI wafer is provided having a substrate, an insulating layer disposed over the substrate, and a layer of semiconductor material disposed over the insulating layer. The semiconductor material is patterned to form a mesa structure. The wafer is annealed to form a raised segment on the mesa structure.
申请公布号 US2004197969(A1) 申请公布日期 2004.10.07
申请号 US20030406403 申请日期 2003.04.03
申请人 CHEN HAO-YU;YEO YEE-CHIA;YANG FU-LIANG;HU CHENMING 发明人 CHEN HAO-YU;YEO YEE-CHIA;YANG FU-LIANG;HU CHENMING
分类号 H01L21/00;H01L21/336;H01L21/84;H01L27/01;H01L27/12;H01L29/786;H01L31/062;(IPC1-7):H01L21/84 主分类号 H01L21/00
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