| 摘要 |
<p>PURPOSE: A method for fabricating a polycrystalline silicon TFT is provided to improve a device characteristic and reliability by reducing a fabrication process and preventing a damage region due to doping. CONSTITUTION: A buffer layer(502) is formed on a glass substrate(501). An amorphous silicon layer is formed and patterned on the buffer layer. A gate insulating layer(504) and a gate metal layer are formed and patterned on the amorphous silicon layer. An n+ doping process is performed on the glass substrate. An interlayer dielectric is formed on the entire surface of the glass substrate. A contact hole is formed on the glass substrate. An initial metal layer is formed on the contact hole. A source/drain electrode(518,528) are formed thereon. A thermal process for the glass substrate is performed. The amorphous silicon is crystallized by applying electric field to the glass substrate.</p> |
