| 发明名称 |
PHOTORESIST HAVING HYDROXYLATED GROUP WHICH CAN BE CUT BY PHOTOACID |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new hydroxyl ester-containing polymer composition which is useful as a base resin of a resist for photoimaging to form an image in the manufacture of a semiconductor device and for the use of a photoresist (positive-working and/or negative-working) and which has a potential as a base resin for various purposes, and to provide a photoresist having improved performance at 193 nm and 157 nm. <P>SOLUTION: The polymer composition and the photoresist are prepared by using a polymer as the base resin made functional with at least one kind of hydroxyester functional group expressed by -CO<SB>2</SB>-C(R<SP>1</SP>)(R<SP>2</SP>)-[C(R<SP>3</SP>)(R<SP>4</SP>)]<SB>n</SB>-C(R<SP>5</SP>)(R<SP>6</SP>)-OH. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
| 申请公布号 |
JP2004280049(A) |
申请公布日期 |
2004.10.07 |
| 申请号 |
JP20030346258 |
申请日期 |
2003.10.03 |
| 申请人 |
E I DU PONT DE NEMOURS & CO |
发明人 |
FARNHAM WILLIAM BROWN;FEIRING ANDREW L;SCHADT FRANK L III;QIU WEIMING |
| 分类号 |
G03F7/027;C08F20/26;G03C1/73;G03F7/004;G03F7/038;G03F7/039;G03F7/20;G03F7/30;H01L21/027 |
主分类号 |
G03F7/027 |
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