| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a desired pattern on a substrate to be processed by forming a resist pattern having no tilt or collapse, and to manufacture a semiconductor device by using the method for forming a pattern. <P>SOLUTION: An antireflection film 2 containing an acidic substance or a basic substance is formed on a semiconductor substrate 1, and a chemically amplifying resist film 3 containing an acid generating agent is formed on the antireflection film 2. The resist film 3 is irradiated with exposure light through a specified mask, heated and developed to form a resist pattern 8. The cross section of the resist pattern 8 has structure composed of a tapered part 8a in contact with the antireflection film 3 and a square part 8b on the tapered part 8a. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
