| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for evaluating a semiconductor single crystal, capable of easily detecting the flaw of a crystal caused by the growth of the crystal. SOLUTION: After the semiconducting single crystal is ground into a cylindrical shape and further ground to form an orientation flat part 2a, the surface of the single crystal ingot 2 obtained is subjected to pseudo mirror surface processing and infrared rays, having energy smaller than the band gap energy of a semiconductor material constituting the single-crystal ingot 2 are allowed to be entered in the direction of the orientation flat part 2a from the surface on the side opposite to the orientation flat part 2a of the single-crystal ingot 2. By having the light transmitted through the single crystal ingot 2 photographed by an infrared camera 4, having sensitivity with respect to the infrared rays provided on the orientation flat part 2a, flaws in the single crystal ingot 2 are detected. COPYRIGHT: (C)2005,JPO&NCIPI
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