| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a photomask by which not only correction for the light proximity effect caused in a region within several μm range but correction for the density of a pattern in a larger region can be carried out to correct the pattern profile of a photomask. <P>SOLUTION: First, a photomask 3 to be used for exposure is subjected to the correction of the mask pattern form according to the space between adjacent mask patterns and to the mask pattern form. Then the photomask 3 is divided into a plurality of mesh M, and the pattern form of the photomask 3 is corrected according to the possession rate R of the mask pattern in each mesh M. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
