| 摘要 |
<p>Process for incorporating a back surface field into a silicon solar cell by depositing a layer of aluminium on the rear surface of the cell, sintering the aluminium at a temperature between 700 and 1000° C., exposing the cell to an atmosphere of a compound of Group V element and diffusing at a temperature of between 950 and 1000°C. so as to dope exposed p-type silicon surfaces with the Group V element. The step of exposing the cell to an atmosphere of a compound of a Group V element is carried separately from the step of sintering the aluminium layer, and subsequent to the step of depositing a layer of aluminium on the rear surface of the cell.</p> |
