发明名称 |
METHOD AND APPARATUS FOR IRRADIATING LASER, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for irradiating laser light with which a crystalline defective region formed on a semiconductor film can be minimized, and provide a manufacturing method of a semiconductor device. SOLUTION: According to the present invention, a long crystal grain region is formed on a semiconductor film while suppressing the formation of the crystalline defective region by subsidiarily radiating a fundamental wave for harmonic waves. There is included another aspect of the present invention where a part of a beam spot of the higher harmonics having lower energy density on an irradiation surface is irradiated with a part of a beam spot of the fundamental wave having higher energy density. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2004282060(A) |
申请公布日期 |
2004.10.07 |
申请号 |
JP20040053312 |
申请日期 |
2004.02.27 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
TANAKA KOICHIRO;YAMAZAKI SHUNPEI |
分类号 |
H01L21/20;H01L21/268;H01L21/336;H01L29/786;H01S3/00;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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主权项 |
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地址 |
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