| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a high-frequency circuit by which a through hole structure is formed in a part of a substrate having a wiring for signal that dielectric films are formed in multiple layers without peeling of the dielectric films. SOLUTION: In the manufacturing process of a high-frequency circuit, when a through hole 105 structure is formed in dielectric films 102 and 104 facing the circuit surface of an active element 106 and a substrate 101 in the substrate 101 to which the active element 106 is flip-chip mounted, the opening diameter of the dielectric film 102 in the lower layer is made larger than that of the dielectric film 104 in the upper layer and an interlayer part of the dielectric film is not exposed. Thus, an SiO2 film that is formed to improve the adhesion of the dielectric films is not etched in a step for removing a sheath metal layer in the formation of wiring for signal. COPYRIGHT: (C)2005,JPO&NCIPI
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