发明名称 CARBON NITRIDE COMPOSITION, THIN FILM TRANSISTOR HAVING THE CARBON NITRIDE COMPOSITION, DISPLAY HAVING THE THIN FILM TRANSISTOR, AND METHODS FOR PRODUCING THEM
摘要 PROBLEM TO BE SOLVED: To efficiently form a carbon nitride composition which gives a film having high gas barrier properties, stability, a high ability to coat, and high adhesion even when it is formed into the film at a low temperature. SOLUTION: The carbon nitride composition can maintain stability and stress relaxation properties though it is formed into a film at a film formation temperature, e.g., 100°C or below, desirably, 50°C or below, more desirably, 20 to 30°C, at which the composition can contain 30 to 45 atomic% hydrogen. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004277882(A) 申请公布日期 2004.10.07
申请号 JP20040048985 申请日期 2004.02.25
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 MAEKAWA SHINJI
分类号 B65D23/02;C01B21/087;C23C16/36;H01L21/312;H01L21/336;H01L29/786;(IPC1-7):C23C16/36 主分类号 B65D23/02
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