| 摘要 |
An ESD protection device (20) comprises an N-type epitaxial collector (21), a first, lightly doped, deep base region (221) and second, highly doped, shallow base region (222) that extends a predetermined lateral dimension. The device responds to an ESD event by effecting vertical breakdown between the base regions and the N-type epitaxial collector. The ESD response is controlled by the predetermined lateral dimension, S, which, in one embodiment, may be is determined by a single masking step. Consequently, operation of the ESD protection device is rendered relatively insensitive to the tolerances of a fabrication process, and to variations between processes.
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