| 摘要 |
A method of forming self-aligned contacts that includes providing at least one stacked-gate structure on a semiconductor substrate, forming a first dielectric layer on the stacked-gate structure and the semiconductor substrate, forming a second dielectric layer on the first dielectric layer, the second dielectric layer being etch selective relative to the first dielectric layer, etching the second dielectric layer to expose a portion of the first dielectric layer formed on a top surface and along at least a portion of upper sidewalls of the stacked-gate structure, removing the exposed portion of the first dielectric layer, and forming a third dielectric layer on the sidewalls of the stacked-gate structure.
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