SEMICONDUCTOR DEVICE, CAPABLE OF ENDURING EASILY IMPACT, AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to obtain a high resistance of the impact generated from a packaging process by improving remarkably the strength of a pad region in the semiconductor device using a silicon oxide layer with a relatively high strength compared to a low-k film. CONSTITUTION: A low-k film(11) with a relative dielectric constant of 3 or less is formed on a substrate(1) with a pad region(A) and a circuit region(B). An insulating layer(15) with a relatively high strength compared to the low-k film is formed in the low-k film of the pad region. The insulating layer is made of a silicon oxide layer. A plurality of multilayer metal lines are formed in the insulating layer of the pad region and the low-k film of the circuit region, respectively. A bonding pad is formed on the uppermost layer of each multilayer metal line.