发明名称 |
ANISOTROPES ÄTZEN ORGANISCHER ISOLIERSCHICHTEN |
摘要 |
The present invention is related to a method for forming at least one opening in an organic-containing insulating layer comprising the step of: covering said organic-containing insulating layer with a bilayer, said bilayer comprising a resist hard mask layer, being formed on said organic-containing insulating layer, and a resist layer being formed on said resist hard mask layer, patterning said bilayer, creating said opening by plasma etching said organic-containing insulating layer in a reaction chamber containing a gaseous mixture, said gaseous mixture comprising an oxygen-containing gas and an inert gas, said inert gas and said oxygen-containing gas being present in said gaseous mixture at a predetermined ratio, said ratio being chosen such that spontaneous etching is substantially avoided. <IMAGE> |
申请公布号 |
DE69821802(T2) |
申请公布日期 |
2004.10.07 |
申请号 |
DE1998621802T |
申请日期 |
1998.10.22 |
申请人 |
INTERUNIVERSITAIR MICRO-ELEKTRONICA CENTRUM VZW, HEVERLEE |
发明人 |
VANHAELEMEERSCH, SERGE;RODIONOVICH BAKLANOV, MIKHAIL |
分类号 |
H01L21/28;G03F7/09;G03F7/36;G03F7/38;G03F7/40;H01L21/302;H01L21/3065;H01L21/311;H01L21/768 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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