SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREFOR, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate having an excellent partial SOI structure in which an SOI region has a sufficient gettering capacity to an adjacent non-SOI region (a bulk region) and the bulk region (an element formable region) is not narrowed.

SOLUTION: One main surface of the first single-crystal silicon layer 3 of the semiconductor substrate 11 is covered partially, and an Si02film 4 as an insulating layer is formed. A region not covered with the film 4 in the single-crystal silicon layer 5 and the edge of the film 4 adjacent to the region are covered, and a second single-crystal silicon layer 5 is formed partially. A polycrystalline silicon layer 6 as an unsingle-crystal silicon layer is formed on the film 4. The polycrystalline silicon layer 6 is formed while an interface with the layer 5 is positioned at the upper section of the film 4.

COPYRIGHT: (C)2005,JPO&NCIPI