| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device of which a bonding pad is prevented from peeling off and to provide its manufacturing method. <P>SOLUTION: The manufacturing method of this semiconductor device includes processes of forming a barrier metal layer 14 on an interlayer insulation film 8, removing at least a part of the barrier metal layer located under a pad opening, forming a secondary Al alloy film 15 on the interlayer insulation film 8 exposed by the removing process and the barrier metal layer 14, forming a bonding pad part 17a on the interlayer insulation film by patterning the secondary Al alloy layer and the barrier metal layer, forming a passivation film 18 on the bonding pad part and the interlayer insulation film, and forming a pad opening located on the bonding pad part in the passivation film. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
