发明名称 |
THIN FILM TRANSISTOR AND ACTIVE MATRIX TYPE LIQUID CRYSTAL DISPLAY DEVICE USING SAME, AND METHOD FOR MANUFACTURING ACTIVE MATRIX TYPE LIQUID CRYSTAL DISPLAY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor and a method for manufacturing the same which is capable of resisting larger AC stress, and further having high performance and high reliability. SOLUTION: An underlying insulating film 11 and a semiconductor layer 12 crystallized using an XeCl excimer laser are formed on a translucent glass substrate 10. A gate insulating film 13 and a gate electrode 15 are formed on the semiconductor layer 12. Impurities are ion-implanted into the semiconductor layer 12 using the gate electrode 15 as a mask. An interlayer dielectric 16, a source electrode 18, a drain electrode 19, and a passivation film 20 are formed on the gate electrode 15, and a deuteration treatment is then performed in a plasma atmosphere containing heavy hydrogen gas to combine heavy hydrogen with the grain boundary of the semiconductor layer 12 or a dangling bond of silicon (an interface state) existing on the interface between silicon and the gate insulating film 13. Thereby Si-D bonds 14 hard to be broken by an AC stress are formed. COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2004282100(A) |
申请公布日期 |
2004.10.07 |
申请号 |
JP20040187922 |
申请日期 |
2004.06.25 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
NAKAMURA AKIKO;TSUTSU HIROSHI |
分类号 |
G02F1/1368;H01L21/336;H01L29/786;(IPC1-7):H01L21/336;G02F1/136 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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