发明名称 |
Magnetic random access memory device having high-heat disturbance resistance and high write efficiency |
摘要 |
A recording layer of an MTJ element is constituted by using a high crystal magnetic anisotropic material. A write wiring used to write data into the MTJ element is covered with a magnetic layer, and the write wiring and the magnetic layer are exchange-coupled with each other. A sum of a magnetic volume of the magnetic layer at a part opposed to the recording layer of the MTJ element and that of the recording layer is set smaller than a magnetic volume of the magnetic layer at any other part.
|
申请公布号 |
US2004195602(A1) |
申请公布日期 |
2004.10.07 |
申请号 |
US20030704552 |
申请日期 |
2003.11.12 |
申请人 |
YODA HIROAKI;UEDA TOMOMASA;AIKAWA HISANORI;KISHI TATSUYA;KAJIYAMA TAKESHI;ASAO YOSHIAKI |
发明人 |
YODA HIROAKI;UEDA TOMOMASA;AIKAWA HISANORI;KISHI TATSUYA;KAJIYAMA TAKESHI;ASAO YOSHIAKI |
分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L27/22;H01L29/76;H01L43/08;(IPC1-7):H01L29/76 |
主分类号 |
G11C11/15 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|