发明名称 MULTI-STEP PROCESS FOR ETCHING PHOTOMASKS
摘要 Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle on a support member in a processing chamber, wherein the reticle comprises a metal photomask layer formed on a silicon-based substrate, and a patterned resist material deposited on the silicon-based substrate, etching the substrate with an oxygen-free processing gas, and then etching the substrate with an oxygen containing processing gas.
申请公布号 WO2004086143(A2) 申请公布日期 2004.10.07
申请号 WO2004US08335 申请日期 2004.03.18
申请人 APPLIED MATERIALS, INC.;BROOKS, CYNTHIA, B.;BUIE, MELISA, J.;STOEHR, BRIGITTE, C. 发明人 BROOKS, CYNTHIA, B.;BUIE, MELISA, J.;STOEHR, BRIGITTE, C.
分类号 A61N5/00;B44C1/22;C03C15/00;C03C25/68;C23F1/00;C23F4/00;G03C5/00;G03F1/00;G03F1/80;G03F9/00;G21G5/00 主分类号 A61N5/00
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