发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE PRECURSOR AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which can be thinned, realizes easy mutual connection of substrates and has high connection reliability. SOLUTION: The semiconductor device comprises a first substrate 12 with a plurality of first electrodes 11, a second substrate 20 with a plurality of second electrodes 21a and a third substrate 22 with a plurality of third electrodes 23. In the semiconductor device, the first substrate 12 and the third substrate 22 are adhered with resin, and the first electrode 11 and the third electrode 23 are opposed and electrically connected via a bump 19. The second substrate 20 is disposed in a space part provided between the first substrate 12 and the third substrate 22. The first electrode 11 and the second electrode 21a are electrically connected via a bump 21b. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004281939(A) 申请公布日期 2004.10.07
申请号 JP20030074458 申请日期 2003.03.18
申请人 FUJITSU LTD 发明人 SAKUYAMA SEIKI
分类号 H01L23/12;(IPC1-7):H01L23/12 主分类号 H01L23/12
代理机构 代理人
主权项
地址