FIELD-EFFECT TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a field-effect transistor which improves FET characteristics and which can remarkably simplify its manufacturing steps in a method for manufacturing the field-effect transistor having an SOI (Si-On-Insulator) structure and a strained Si channel layer, and to provide a method for manufacturing the same. SOLUTION: The field-effect transistor having the SOI structure and the strained Si channel layer can improve the FET characteristics and can remarkably simplify its manufacturing steps by using a crystalline metal oxide having a different lattice interval from the Si. The method for manufacturing the same is provided. COPYRIGHT: (C)2005,JPO&NCIPI