发明名称 |
METHOD FOR DEPOSITING A LOW-K MATERIAL HAVING A CONTROLLED THICKNESS RANGE |
摘要 |
A method for depositing, with controlled thickness and thickness non-uniformity, a layer of a low-k dielectric material using a chemical vapor deposition process (CVD), which deposits the material for a duration of time during part of the deposition at a higher pressure of reactant gas than during the remaining time of the deposition. |
申请公布号 |
WO2004075258(A3) |
申请公布日期 |
2004.10.07 |
申请号 |
WO2004US03772 |
申请日期 |
2004.02.10 |
申请人 |
APPLIED MATERIALS INC.;LANG, CHI-I;CHO, SEON-MEE;LEE, PETER, WAI-MAN |
发明人 |
LANG, CHI-I;CHO, SEON-MEE;LEE, PETER, WAI-MAN |
分类号 |
C23C16/40;C23C16/44;C23C16/455;H01L21/316 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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