MAGNETIC MEMORY DEVICE, SENSE AMPLIFIER CIRCUIT, AND READING METHOD OF MAGNETIC MEMORY DEVICE

摘要

A magnetic memory device, a sense amplifier circuit, and a reading method of the magnetic memory device that can obtain read signal outputs having a high S/N ratio and realize reduction of power consumption and circuit space. A sense amplifier is configured by connecting transistors (41A,41B), which serve as differential amplifiers, to a single constant current circuit (50) via respective switches (46) (...,46n,46n+1,...). Each of these switches is connected to a respective corresponding bit decode line (20) (...,20n,20n+1,...) and to a lead selection signal line (90). Read/write signals are outputted from the lead selection signal line (90), and the switches (46) acts in accordance with both the bit decode values and the read/write signals.