发明名称 DEVICE AND METHOD FOR HEAT TREATING SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To uniformly raise and lower the temperature at the time of heat treating a wafer. SOLUTION: A single semiconductor heat treating device is constituted by disposing a process tube 12 which can house a wafer 10 in a horizontal state and has a rectangular cross section, a susceptor 14 which covers the process tube 12 and has an oblong cross section, and an induction heating coil 16 which covers the susceptor 14 and has a shape similar to that of the susceptor 14. In addition, the portion of the wall surface of the susceptor 14 corresponding to the planar section of the wafer 10 is made parallel to the planar section of the wafer 10. In addition, spaces are respectively provided between the top and bottom surfaces of the process tube 12, and the susceptor 14 and supply/exhaust ducts 18 communicating with the spaces are provided, respectively. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004281636(A) 申请公布日期 2004.10.07
申请号 JP20030069781 申请日期 2003.03.14
申请人 MITSUI ENG & SHIPBUILD CO LTD;KOYO THERMO SYSTEM KK 发明人 FUJIYAMA CHIKAHIDE;ISHIBASHI SATOYUKI;UCHIDA NAOKI;KITAMURA SEIICHI;OZAKI KAZUHIRO;ONO HIROSHI
分类号 H01L21/324;(IPC1-7):H01L21/324 主分类号 H01L21/324
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