| 摘要 |
PROBLEM TO BE SOLVED: To reduce a potential barrier with respect to electrons at an interface of an emitter/base junction of a HBT, to enhance a current amplification factorβ. SOLUTION: In a hetero-junction bipolar transistor having a GaAs base layer 7 and an AlGaAs emitter layer 6, a spacer layer 12 in which an n type impurity carrier density is varied in a depth direction is provided between the GaAs base layer 7 and the AlGaAs emitter layer 6. Thus, the potential barrier with respect to electrons is reduced at the interface of the emitter/base junction of the HBT, and the current amplification factorβcan be enhanced more than conventionally. COPYRIGHT: (C)2005,JPO&NCIPI
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