| 摘要 |
PROBLEM TO BE SOLVED: To provide the evaluation method of an insulating film which can perform the in-situ in-line evaluation of the quality of a gate oxynitride film in a semiconductor manufacture process. SOLUTION: The evaluation method of an insulating film formed on a semiconductor substrate 1 includes a process for applying a specified amount of positive or negative charge to a prescribed position on the film 2 by using an electric charge generator 4, and a process for measuring the potential of the insulating film 2 front surface by noncontact by a capacity coupling measuring instrument 3. The electric film thickness of the insulating film 2 is calculated from the inclination of a semiconductor build-up region of a correlation curve of the measuring potential to application charge. Consequently, in-situ in-line monitoring is enabled and it contributes to the quality improvement of a device by the evaluation of the insulating film. COPYRIGHT: (C)2005,JPO&NCIPI
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