| 摘要 |
PROBLEM TO BE SOLVED: To improve prediction accuracy in predicting the result of processing a wafer subjected to etching. SOLUTION: Operation data e.g. optical data and process result data e.g. CD shift amount data which can be obtained for each processing of the wafer are collected, correlation (regression formula) is obtained by performing a multivariate analysis such as a PLS method on the basis of the optical data and the CD shift amount data, and a CD shift amount or process results are predicted by using the optical data at processing other processing objects (first predicting process). The weighting coefficients for the optical data are set on the basis of this prediction result to generate the weighted optical data, correlation (regression formula) is obtained by the PLS method on the basis of the weighted optical data and CD shift amount data, and process results are predicted by using the optical data at processing the other processing objects (second predicting process). COPYRIGHT: (C)2005,JPO&NCIPI
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