| 摘要 |
PROBLEM TO BE SOLVED: To provide an oxide thin film, having a hyperfine channel structure, the groove width and groove depth of which are controlled at an atomic level and useful as a high functional element. SOLUTION: After the epitaxial growth of an oxide thin film on the surface of a single crystal oxide substrate, the step height and terrace width of which are controlled at an atomic level, an oxide thin film is annealed in a high temperature atmosphere ranging from 400 to 1550°C. The hyperfine channel structure, the groove width and the groove depth of which are controlled at an atomic level according to the substrate surface, is fixed in the oxide thin film by substance diffusion in annealing. COPYRIGHT: (C)2005,JPO&NCIPI
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