| 摘要 |
A method for defining a ring pattern is described, which forms a ring pattern of any shape with only one photomask without misalignment. In the method, a material layer to be defined and a patterned photoresist layer are sequentially formed on a substrate. A silylated photoresist film is formed around the sidewall of the patterned photoresist layer, and then the patterned photoresist layer is removed. The material layer exposed by the silylated photoresist film is removed to form a ring pattern, and then the silylated photoresist film is removed.
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