发明名称 PHOTODIODE ARRAY AND PRODUCTION METHOD THEREOF, AND RADIATION DETECTOR
摘要 <p>A photodiode array (1) is provided with an n-type silicon substrate (3). A plurality of photodiodes (4) are formed in an array form on the surface opposite to the surface, onto which a light (L) to be detected enters, of the n-type silicon substrate (3). An area corresponding to a photodiode (4)-formed area on the light-to-be-detected (L)-incident surface of the n-type silicon substrate (3) is at least coated to provide a resin film (6) that transmits the light to be detected (L).</p>
申请公布号 WO2004086505(A1) 申请公布日期 2004.10.07
申请号 WO2004JP04212 申请日期 2004.03.25
申请人 HAMAMATSU PHOTONICS K.K.;SHIBAYAMA, KATSUMI 发明人 SHIBAYAMA, KATSUMI
分类号 G01T1/20;H01L27/14;H01L27/144;H01L27/146;H01L31/09;H01L31/115;(IPC1-7):H01L27/146;H01L31/10 主分类号 G01T1/20
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