发明名称 |
PHOTODIODE ARRAY AND PRODUCTION METHOD THEREOF, AND RADIATION DETECTOR |
摘要 |
<p>A photodiode array (1) is provided with an n-type silicon substrate (3). A plurality of photodiodes (4) are formed in an array form on the surface opposite to the surface, onto which a light (L) to be detected enters, of the n-type silicon substrate (3). An area corresponding to a photodiode (4)-formed area on the light-to-be-detected (L)-incident surface of the n-type silicon substrate (3) is at least coated to provide a resin film (6) that transmits the light to be detected (L).</p> |
申请公布号 |
WO2004086505(A1) |
申请公布日期 |
2004.10.07 |
申请号 |
WO2004JP04212 |
申请日期 |
2004.03.25 |
申请人 |
HAMAMATSU PHOTONICS K.K.;SHIBAYAMA, KATSUMI |
发明人 |
SHIBAYAMA, KATSUMI |
分类号 |
G01T1/20;H01L27/14;H01L27/144;H01L27/146;H01L31/09;H01L31/115;(IPC1-7):H01L27/146;H01L31/10 |
主分类号 |
G01T1/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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