发明名称 Rapid cycle chamber having a top vent with nitrogen purge
摘要 A chamber for transitioning a semiconductor substrate between modules operating at different pressures is provided. The chamber includes a base defining an outlet. The outlet permits removal of an atmosphere within the chamber to create a vacuum. A substrate support for supporting a semiconductor substrate within the chamber is included. A chamber top having an inlet is included. The inlet is configured to allow for the introduction of a gas into the chamber to displace moisture in a region defined above the substrate support. Sidewalls extending from the base to the chamber top are included. The sidewalls include access ports for entry and exit of a semiconductor substrate from the chamber. A method for conditioning an environment above a region of a semiconductor substrate within a pressure varying interface is also provided.
申请公布号 US2004194268(A1) 申请公布日期 2004.10.07
申请号 US20040828358 申请日期 2004.04.19
申请人 LAM RESEARCH CORPORATION 发明人 HALSEY HARLAN I.;JACOB DAVID E.
分类号 B65G49/00;C23C14/56;C23C16/44;H01L21/00;H01L21/677;(IPC1-7):H01L21/00;H01L21/64;H01L21/22;H01L21/38 主分类号 B65G49/00
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