发明名称 |
Rapid cycle chamber having a top vent with nitrogen purge |
摘要 |
A chamber for transitioning a semiconductor substrate between modules operating at different pressures is provided. The chamber includes a base defining an outlet. The outlet permits removal of an atmosphere within the chamber to create a vacuum. A substrate support for supporting a semiconductor substrate within the chamber is included. A chamber top having an inlet is included. The inlet is configured to allow for the introduction of a gas into the chamber to displace moisture in a region defined above the substrate support. Sidewalls extending from the base to the chamber top are included. The sidewalls include access ports for entry and exit of a semiconductor substrate from the chamber. A method for conditioning an environment above a region of a semiconductor substrate within a pressure varying interface is also provided.
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申请公布号 |
US2004194268(A1) |
申请公布日期 |
2004.10.07 |
申请号 |
US20040828358 |
申请日期 |
2004.04.19 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
HALSEY HARLAN I.;JACOB DAVID E. |
分类号 |
B65G49/00;C23C14/56;C23C16/44;H01L21/00;H01L21/677;(IPC1-7):H01L21/00;H01L21/64;H01L21/22;H01L21/38 |
主分类号 |
B65G49/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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