发明名称 |
Positive resist composition and method of pattern formation using the same |
摘要 |
A positive resist composition comprising: at least two resins which differ in glass transition temperature by at least 5° C.; and a compound which generates an acid upon irradiation with actinic rays or radiation, wherein each of the two resins comprises at least either of a repeating unit derived from an acrylic acid derivative monomer and a repeating unit derived from an methacrylic acid derivative monomer and further comprises an alicyclic structure and at least one group that increases a solubility of the resin in alkaline developer by the action of an acid.
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申请公布号 |
US2004197707(A1) |
申请公布日期 |
2004.10.07 |
申请号 |
US20040801723 |
申请日期 |
2004.03.17 |
申请人 |
FUJI PHOTO FILM CO., LTD. |
发明人 |
YAMANAKA TSUKASA;SATO KENICHIRO |
分类号 |
G03F7/004;G03F7/039;G03F7/40;H01L21/027;(IPC1-7):G03C1/76 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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