发明名称 Positive resist composition and method of pattern formation using the same
摘要 A positive resist composition comprising: at least two resins which differ in glass transition temperature by at least 5° C.; and a compound which generates an acid upon irradiation with actinic rays or radiation, wherein each of the two resins comprises at least either of a repeating unit derived from an acrylic acid derivative monomer and a repeating unit derived from an methacrylic acid derivative monomer and further comprises an alicyclic structure and at least one group that increases a solubility of the resin in alkaline developer by the action of an acid.
申请公布号 US2004197707(A1) 申请公布日期 2004.10.07
申请号 US20040801723 申请日期 2004.03.17
申请人 FUJI PHOTO FILM CO., LTD. 发明人 YAMANAKA TSUKASA;SATO KENICHIRO
分类号 G03F7/004;G03F7/039;G03F7/40;H01L21/027;(IPC1-7):G03C1/76 主分类号 G03F7/004
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