发明名称 |
SUBSTRATE WITH DESIRED ROUGHNESS FOR PHOTO MASK, PHOTO MASK BLANK AND PHOTO MASK |
摘要 |
PURPOSE: A substrate for a photo mask, a photo mask blank and the photo mask are provided to restrain particles from being generated at a side portion of the substrate and to handle easily the substrate without slides by controlling properly the roughness of an end surface and a chamfered surface of the substrate. CONSTITUTION: A substrate for a photo mask includes a main surface composed of a front surface and a rear surface, an end surface(T), and chamfered surfaces(C) between the end surface and the main surface. Each roughness of the end surface and the chamfered surface is within a range of 0.03 to 0.3 μm. |
申请公布号 |
KR20040084992(A) |
申请公布日期 |
2004.10.07 |
申请号 |
KR20040020602 |
申请日期 |
2004.03.26 |
申请人 |
HOYA CORPORATION |
发明人 |
OHTAGURO RYU;HASHIGUCHI KOICHI |
分类号 |
H01L21/027;C03C19/00;C03C23/00;G03F1/00;G03F1/60;G03F7/20;G03F9/00;H01L21/00 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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