| 摘要 |
PROBLEM TO BE SOLVED: To provide a drive circuit of a voltage drive element in which a switching speed is improved. SOLUTION: An IGBT 10 is driven by alternately turning on and off a P-channel type MOSFET 20 and an N-channel type MOSFET 30. When the MOSFET 20 and the MOSFT 30 are turned on simultaneously when the IGBT 10 is turned on, a voltage drop occurs at a current limiting resistor 31 via feedthrough current I. Since a MOSFET 40 is turned on by this voltage, gate current Ig is generated at the IGBT 10 via the MOSFET 40 from a gate power source Vcc. Accordingly, a switching time for turning on can be shortened by increasing the gate current by setting the resistance value of a gate resistor 33 to a small value. The switching speed is improved as compared with the case of routing a current limiting resistor 31 which cannot reduce the resistance value to limit the feedthrough current. COPYRIGHT: (C)2005,JPO&NCIPI
|
