发明名称 |
Equipment and method for manufacturing silicon carbide single crystal |
摘要 |
A method for manufacturing a silicon carbide single crystal includes the steps of: setting a substrate as a seed crystal in a reactive chamber; introducing a raw material gas into the reactive chamber; growing a silicon carbide single crystal from the substrate; heating the gas at an upstream side from the substrate in a gas flow path; keeping a temperature of the substrate at a predetermined temperature lower than the gas so that the single crystal is grown from the substrate; heating a part of the gas, which is a non-reacted raw material gas and does not contribute to crystal growth, after passing through the substrate; and absorbing a non-reacted raw material gas component in the non-reacted raw material gas with an absorber.
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申请公布号 |
US2004194694(A1) |
申请公布日期 |
2004.10.07 |
申请号 |
US20040814179 |
申请日期 |
2004.04.01 |
申请人 |
DENSO CORPORATION |
发明人 |
SUGIYAMA NAOHIRO;KITOU YASUO;MAKINO EMI;HARA KAZUKUNI;FUTATSUYAMA KOUKI;OKAMOTO ATSUTO |
分类号 |
C30B25/02;(IPC1-7):C30B1/00;C30B28/14;C30B28/12;C30B25/00;C30B23/00 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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