发明名称 CVD method for forming a porous low dielectric constant SiOCH film
摘要 Organosilica glass and organic polymeric films useful for electronic devices and methods for making same are disclosed herein. In one embodiment of the present invention, there is provided a method for enhancing the chemical vapor deposition of a film comprising an organic species comprising: providing a substrate within a reaction chamber; introducing into the chamber gaseous chemical reagents comprising an organic precursor having carbon and hydrogen bonds contained therein and a rate enhancer wherein the rate enhancer is at least one member selected from the group consisting of an oxygen-containing compound; a peroxide compound having the formula R 1 OOR 2 ; a peracid compound having the formula R 3 C(O)OC(O)R 4 ; a fluorine-containing compound; and a heavy inert gas; and applying energy to the chemical reagents in the reaction chamber sufficient to induce the reaction of the reagents and deposit the film upon at least a portion of the substrate.
申请公布号 EP1464726(A2) 申请公布日期 2004.10.06
申请号 EP20040007571 申请日期 2004.03.29
申请人 US 发明人 US;US;CA;CA;US;US;US
分类号 H01L21/768;C23C16/30;C23C16/56;H01B3/46;H01L21/312;H01L21/316;H01L23/522;(IPC1-7):C23C16/40 主分类号 H01L21/768
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