SEMICONDUCTOR LASER DIODE HAVING ASYMMETRIC SCH STRUCTURE AND FABRICATING METHOD THEREOF, IN WHICH AN inGaAsp LAYER IS INSERTED INTO THE FIRST N-TYPE SCH LAYER
摘要
PURPOSE: A semiconductor laser diode having an asymmetric SCH(Separate-Confinement Hetero) structure and a fabricating method thereof are provided to improve a thermal characteristic and an optical characteristic by reducing internal loss due to inserting a p-InP layer. CONSTITUTION: An n-type cladding layer(220) is formed on a substrate. An n-type second SCH layer(218) is formed on the n-type cladding layer. The first n-type SCH layer(210) is formed on the second SCH layer. An active layer(212) is formed on the first n-type SCH layer. The first p-type SCH layer(208) is formed on the active layer. The first insertion layer(206) is formed on the p-type first SCH layer. A p-type second SCH layer(204) is formed on the first insertion layer. A p-type cladding layer(202) is formed on the p-type second SCH layer.
申请公布号
KR20040083753(A)
申请公布日期
2004.10.06
申请号
KR20030018348
申请日期
2003.03.25
申请人
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人
CHO, UN JO;CHOI, WON JUN;HAN, IL GI;HUH, DU CHANG;LEE, JEONG IL;PARK, YONG JU;SONG, JIN DONG