SEMICONDUCTOR PROCESS FOR REMOVING DEFECTS DUE TO EDGE CHIPS OF SEMICONDUCTOR WAFER TO PREVENT LOOSING STATES OF ABNORMAL PATTERNS

摘要

PURPOSE: A semiconductor process for removing defects due to edge chips of a semiconductor wafer is provided to prevent loosing states of abnormal patterns by using a photoresist pattern for covering edge chip regions of the semiconductor wafer. CONSTITUTION: A molding oxide layer(59) is formed on a semiconductor wafer(51). A plurality of storage node holes are formed within plural effective chip regions and plural edge chip regions on an inner side of a wafer by patterning the molding oxide layer. A plurality of storage nodes(65a,65b) are formed within the storage node holes. A photoresist layer is formed on the entire surface of the semiconductor wafer. A photoresist pattern(69) for covering the edge chip regions is formed by removing selectively the photoresist layer from the effective chip regions. Sidewalls of the storage nodes within the effective chip regions are selectively exposed by wet-etching the molding oxide layer within the effective chip regions.