| 摘要 |
PURPOSE: An antireflective material, a substrate having an antireflective layer obtained from the antireflective material and a pattern formation method using the antireflective material are provided, to obtain an excellent antireflective effect to the exposure using the light having a short wavelength and a high etching selectivity and to allow a vertical resist pattern to be formed on a photoresist layer on the antireflective layer. CONSTITUTION: The antireflective material comprises a polymer compound having a repeating unit represented by the formula 1, wherein R1 is a monovalent organic group having a crosslinking group; R2 is a monovalent organic group having a light absorbing group; R3 is a monovalent group having at least one functional group selected from carbonyl, ester, a lactone, amide, ether and nitrile; 0<a1<1, 0<b1<1, 0<c1<1, and 0.5<=a1+b1+c1<=1; R4, R5 and R6 are H, OH, a C1-C6 alkyl group, a C6-C10 aryl group or a C1-C6 fluorinated alkyl group; and m, n and p are 0 or 1. Also the antireflective material comprises a polymer compound having a repeating unit represented by the formula 2 and a polymer compound having a repeating unit represented by the formula 3, wherein 0<a2<1, 0<b2<1, and 0.5<= a2+b2<=1, and 0<a3<1, 0<c2<1, and 0.5<=a3+c2<=1. |
