发明名称 |
Organometallic germanium compounds suitable for use in vapor deposition processes |
摘要 |
Organometallic compounds suitable for use as vapor phase deposition precursors for Group IV metal-containing films are provided. Methods of depositing Group IV metal-containing films using certain organometallic precursors are also provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.
|
申请公布号 |
EP1464724(A2) |
申请公布日期 |
2004.10.06 |
申请号 |
EP20040251948 |
申请日期 |
2004.04.01 |
申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. |
发明人 |
SHENAI-KHATKHATE, DEODATTA VINAYAK;POWER, MICHAEL BRENDAN |
分类号 |
C23C16/18;C07C391/00;C07C395/00;C07F7/02;C07F7/08;C07F7/10;C07F7/12;C07F7/30;C23C16/22;C23C16/24;C23C16/28;C23C16/30;H01L21/205;(IPC1-7):C23C16/22 |
主分类号 |
C23C16/18 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|