发明名称 |
Equipment for manufacturing silicon carbide single crystal |
摘要 |
<p>A method for manufacturing a silicon carbide single crystal includes the steps of: setting a substrate (13) as a seed crystal in a reactive chamber (11); introducing a raw material gas into the reactive chamber (11); growing a silicon carbide single crystal (21) from the substrate (13); heating the gas at an upstream side from the substrate (13) in a gas flow path; keeping a temperature of the substrate (13) at a predetermined temperature lower than the gas so that the single crystal (21) is grown from the substrate (13); heating a part of the gas, which is a non-reacted raw material gas and does not contribute to crystal growth, after passing through the substrate (13); and absorbing a non-reacted raw material gas component in the non-reacted raw material gas with an absorber (4, 12).</p> |
申请公布号 |
EP1464735(A2) |
申请公布日期 |
2004.10.06 |
申请号 |
EP20040008256 |
申请日期 |
2004.04.05 |
申请人 |
DENSO CORPORATION |
发明人 |
SUGIYAMA, NAOHIRO;KITOU, YASUO;MAKINO, EMI;HARA, KAZUKUNI;FUTATSUYAMA, KOUKI;OKAMOTO, ATSUTO |
分类号 |
C30B25/02;C23C16/32;C23C16/44;C23C16/455;C23C16/46;C30B25/10;C30B25/14;C30B25/16;C30B29/36;(IPC1-7):C30B25/02 |
主分类号 |
C30B25/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|