发明名称 METAL PAD OF SEMICONDUCTOR DEVICE TO IMPROVE THICKNESS UNIFORMITY OF INTERLAYER DIELECTRIC
摘要 PURPOSE: A metal pad of a semiconductor device is provided to improve thickness uniformity of an interlayer dielectric and focus margin by controlling the density of the metal pad in accordance with a pattern density in a chip. CONSTITUTION: A vacancy(20) is formed in a metal pad(30) used for probing test or wiring. At this time, the density of the vacancy is controlled identically with a pattern density of the same metal film as the metal pad. Also, the vacancy is not overlapped with the stacked metal pad.
申请公布号 KR20040084545(A) 申请公布日期 2004.10.06
申请号 KR20030019693 申请日期 2003.03.28
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 LEE, SANG UK
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
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