发明名称 |
METAL PAD OF SEMICONDUCTOR DEVICE TO IMPROVE THICKNESS UNIFORMITY OF INTERLAYER DIELECTRIC |
摘要 |
PURPOSE: A metal pad of a semiconductor device is provided to improve thickness uniformity of an interlayer dielectric and focus margin by controlling the density of the metal pad in accordance with a pattern density in a chip. CONSTITUTION: A vacancy(20) is formed in a metal pad(30) used for probing test or wiring. At this time, the density of the vacancy is controlled identically with a pattern density of the same metal film as the metal pad. Also, the vacancy is not overlapped with the stacked metal pad.
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申请公布号 |
KR20040084545(A) |
申请公布日期 |
2004.10.06 |
申请号 |
KR20030019693 |
申请日期 |
2003.03.28 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
LEE, SANG UK |
分类号 |
H01L21/60;(IPC1-7):H01L21/60 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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