| 发明名称 |
High-voltage field-effect transistor |
| 摘要 |
A high voltage insulated gate-effect transistor includes an insulated gate field-effect device structure having a source (14) and a drain (19), the drain (19) being formed with an extended well region (17) having one or more buried layers (18) of opposite conduction type sandwiched therein. The one or more buried layers (18) create an associated plurality of parallel JFET conduction channels in the extended portion of the well region. The parallel JFET conduction channels provide the HVFET with a low on-state resistance. |
| 申请公布号 |
EP1465260(A2) |
申请公布日期 |
2004.10.06 |
| 申请号 |
EP20040009635 |
申请日期 |
2000.01.31 |
| 申请人 |
POWER INTEGRATIONS, INC. |
发明人 |
RUMENNIK, VLADIMIR;DISNEY, DONALD R.;AJIT, JANARDHANAN S. |
| 分类号 |
H01L21/266;H01L21/336;H01L29/06;H01L29/08;H01L29/10;H01L29/40;H01L29/417;H01L29/423;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/266 |
| 代理机构 |
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