发明名称 Illumination source and photomask optimization
摘要 An illumination source is optimized by changing the intensity and shape of the illumination source to form an image in the image plane that maximizes the minimum image log slope (ILS) at user selected fragmentation points while forcing the intensity at the fragmentation points to be within a small intensity range. An optimum mask may be determined by changing the magnitude and phase of the diffraction orders to form an image in the image plane that maximizes the minimum ILS at user selected fragmentation points while forcing the intensity at the fragmentation points to be within a small intensity range. An optimal mask may be used to create a CPL mask by assigning areas of minimum transmission in an optimum transmission mask a -1, and areas of maximum transmission a +1. Primitive rectangles having a size set to a minimum feature size of a mask maker are assigned to the located minimum and maximum transmission areas and centered at a desired location. The edges of the primitive rectangle are varied to match optimal diffraction orders O(m,n). The optimal CPL mask O CPL (x,y) is then formed.
申请公布号 EP1465016(A2) 申请公布日期 2004.10.06
申请号 EP20040251926 申请日期 2004.03.31
申请人 ASML MASKTOOLS B.V. 发明人 SOCHA, ROBERT JOHN
分类号 G03F1/08;G03F7/20;H01L21/027;(IPC1-7):G03F7/20 主分类号 G03F1/08
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