发明名称 |
CIRCUIT HAVING LOW-VOLTAGE DETECTION CIRCUIT FOR PREVENTING UNINTENTIONAL WRITING OPERATION TO MEMORY AND SEMICONDUCTOR DEVICE HAVING THE SAME |
摘要 |
PURPOSE: A circuit having a low-voltage detection circuit for preventing an unintentional writing operation to a memory and a semiconductor device having the same are provided to prevent the unintentional writing operation to a memory due to a malfunction of a mode control register by preventing the unintentional writing operation according to a control signal. CONSTITUTION: A circuit having a low-voltage detection circuit for preventing an unintentional writing operation to a memory includes a low-voltage detection circuit(1). The low-voltage detection circuit detects a drop of a supply voltage and is turned on and off by a control signal from a control terminal. The circuit having the low-voltage detection circuit is used for preventing the unintentional writing operation to the memory according to the control signal.
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申请公布号 |
KR20040084840(A) |
申请公布日期 |
2004.10.06 |
申请号 |
KR20040020395 |
申请日期 |
2004.03.25 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
KAZUO HOTAKA |
分类号 |
G11C16/02;G06F11/00;G06F13/28;G06F15/78;G11C16/22;G11C16/34;(IPC1-7):G11C16/34 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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