发明名称 CIRCUIT HAVING LOW-VOLTAGE DETECTION CIRCUIT FOR PREVENTING UNINTENTIONAL WRITING OPERATION TO MEMORY AND SEMICONDUCTOR DEVICE HAVING THE SAME
摘要 PURPOSE: A circuit having a low-voltage detection circuit for preventing an unintentional writing operation to a memory and a semiconductor device having the same are provided to prevent the unintentional writing operation to a memory due to a malfunction of a mode control register by preventing the unintentional writing operation according to a control signal. CONSTITUTION: A circuit having a low-voltage detection circuit for preventing an unintentional writing operation to a memory includes a low-voltage detection circuit(1). The low-voltage detection circuit detects a drop of a supply voltage and is turned on and off by a control signal from a control terminal. The circuit having the low-voltage detection circuit is used for preventing the unintentional writing operation to the memory according to the control signal.
申请公布号 KR20040084840(A) 申请公布日期 2004.10.06
申请号 KR20040020395 申请日期 2004.03.25
申请人 SANYO ELECTRIC CO., LTD. 发明人 KAZUO HOTAKA
分类号 G11C16/02;G06F11/00;G06F13/28;G06F15/78;G11C16/22;G11C16/34;(IPC1-7):G11C16/34 主分类号 G11C16/02
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