METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TO REDUCE PARASITIC CAPACITANCE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce parasitic capacitance by forming a space with low-permittivity between a sidewall spacer and an oxide pattern. CONSTITUTION: Conductive lines(110) with a sidewall spacer(120) are formed on a semiconductor substrate(100). An oxide pattern is formed between the conductive lines in order to a desired space(170) between the sidewall spacer and the oxide pattern. An HDP(High Density Plasma) oxide layer(160) is formed on the resultant structure without filling the space. A contact hole is formed to expose the substrate. A contact plug(180) is then filled in the contact hole.