发明名称 Variable gas conductance control for a process chamber
摘要 A deposition system in accordance with one embodiment of the present invention includes a process chamber, a stationary pedestal for supporting a substrate in the process chamber, and a moveable shield forming at least a portion of an enclosure defining the process chamber. Motion of the shield with respect to the stationary pedestal controls a variable gas conductance path for gases flowing through the process chamber thereby modulating the pressure of the process chamber with respect to an external volume. The moveable shield in accordance with an embodiment of the present invention may include several gas channel openings for introducing various process gases into the process chamber. In some embodiments, the moveable shield may alternatively or additionally include an interior cooling or heating channel for temperature control.
申请公布号 US6800173(B2) 申请公布日期 2004.10.05
申请号 US20010902080 申请日期 2001.07.09
申请人 NOVELLUS SYSTEMS, INC. 发明人 CHIANG TONY P.;LEESER KARL F.;BROWN JEFFREY A.;BABCOKE JASON E.
分类号 C23C16/02;C23C16/08;C23C16/18;C23C16/34;C23C16/40;C23C16/44;C23C16/448;C23C16/455;C23C16/458;C23C16/515;H01J37/32;H01L21/285;H01L21/768;(IPC1-7):H05H1/00;C23C16/00 主分类号 C23C16/02
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