| 摘要 |
The semiconductor device comprises insulation films 30a-30f formed on a semiconductor substrate 10, and a thermal conductor 42 buried in the insulation films. The thermal conductor is formed on a tube structure of carbon atoms. The thermal conductor is formed on a tube structure of carbon atoms, which is a material of very high thermal conductivity, can effectively radiate heat of a very high generated in semiconductor elements, etc., such as transistors 24a, 24b, etc. Accordingly, the semiconductor device can have good heat radiation characteristics.
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