| 发明名称 |
Dual gate low noise amplifier |
| 摘要 |
A low noise amplifier topology includes a dual gate transistor device, such as a HEMT device and employs resistive feedback with a DC block associated with the amplifier output to a desired high voltage gain and a low noise figure over a desired range of frequencies.
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| 申请公布号 |
US6801088(B2) |
申请公布日期 |
2004.10.05 |
| 申请号 |
US20030364999 |
申请日期 |
2003.02.12 |
| 申请人 |
NORTHROP GRUMMAN CORPORATION |
发明人 |
ALLEN BARRY R.;CHUNG YUN H.;BRUNONE DAVID J. |
| 分类号 |
H03F3/193;H03F1/22;H03F1/26;H03F1/30;H03F1/34;(IPC1-7):H03F3/16;H03G3/20 |
主分类号 |
H03F3/193 |
| 代理机构 |
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代理人 |
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| 主权项 |
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