| 摘要 |
A composition for film formation capable of forming a silica-based coating film having low water absorption and dielectric constant of 2.1 or lower and useful as an interlayer insulating film material in semiconductor devices, etc. The composition contains: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one silane compound selected from the group consisting of compounds represented by formula (1), compounds represented by formula (2), and compounds represented by formula (3) in the presence of a basic catalyst and water,wherein R represents a hydrogen atom, a fluorine atom, or a monovalent organic group, R<1 >represents a monovalent organic group, and a is an integer of 1 or 2,wherein R<2 >represents a monovalent organic group,wherein R<3 >to R<6 >may be the same or different and each represents a monovalent organic group, b and c may be the same or different and each is a number of 0 to 2, R<7 >represents an oxygen atom, a phenylene group, or a group represented by -(CH2)n-, wherein n is an integer of 1 to 6, and d is 0 or 1; (B) a compound compatible with or dispersible in ingredient (A) and having a boiling point or decomposition temperature of from 250 to 450° C.; and (C) an organic solvent.
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